Author

Feng Qian

Date

March 1988

Document Type

Dissertation

Degree Name

Ph.D.

Department

Dept. of Electrical Engineering

Institution

Oregon Graduate Center

Abstract

The n- and p-channel field effect transistors have been fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of the thin film transistors (TFT's) is characterized and compared for different process conditions. The major cause for the degradation of subthreshold behavior and for the anomalous leakage current in these devices is the presence of the deep level trap sites in grain boundaries. The I-V characteristics are modeled in correlation with the polysilicon material properties, from a unified point of view. A concept of "effective doping" resulting from trapped carriers in grain boundaries is introduced to describe the electrostatics involved therein. The theoretically predicted results are compared with the experimental data and are shown to be in satisfactory agreement. The limitations of the theory are also discussed.

Identifier

doi:10.6083/M4HQ3WVT

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.